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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2353/2SK2354
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2353/2SK2354 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS
(in millimeters)
10.0 0.3. 3.2 0.2 2.7 0.2 4.5 0.2
FEATURES
* Low On-Resistance
2SK2353: RDS(on) = 1.4 (VGS = 10 V, ID = 2.5 A) 2SK2354: RDS(on) = 1.5 (VGS = 10 V, ID = 2.5 A)
* Low Ciss Ciss = 670 pF TYP. * High Avalanche Capability Ratings * Isolate TO-220 Package
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
15.0 0.3
4 0.2 0.7 0.1 2.54
1.3 0.2 1.5 0.2 2.54
13.5 MIN.
12.0 0.2
3 0.1
2.5 0.1 0.65 0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage (2SK2353/2354) VDSS Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 C) Total Power Dissipation (Ta = 25 C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW 10 s, Duty Cycle 1 % VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS 450/500 30 4.5 18 30 2.0 150 4.5 17.4 V V A A W W C A mJ
Gate
1 23
1. Gate 2. Drain 3. Source
MP-45F (ISOLATED TO-220)
Drain
-55 to +150 C
Body Diode
Source
** Starting Tch = 25 C, RG = 25 , VGS = 20 V 0
The information in this document is subject to change without notice. Document No. TC-2499 (O. D. No. TC-8047) Date Published November 1994 P Printed in Japan
(c)
1994
2SK2353/2SK2354
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC Drain to Source On-Resistance SYMBOL RDS(on) MIN. TYP. 1.0 1.1 Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr 670 140 18 11 8 40 8 20 4.5 9 1.0 270 1.0 2.5 1.0 100 100 MAX. 1.4 1.5 3.5 V S UNIT TEST CONDITIONS VGS = 10 V ID = 2.5 A 2SK2353 2SK2354
VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 2.5 A VDS = VDSS, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz ID = 2.5 A VGS(on) = 10 V VDD = 150 V RG = 10 RL = 60 ID = 4.5 A VDD = 400 V VGS = 10 V IF = 4.5 A, VGS = 0 IF = 4.5 A, VGS = 0 di/dt = 50 A/s
A
nA pF pF pF ns ns ns ns nC nC nC V ns nC
Test Circuit 1 Avalanche Capability
D.U.T. RG = 25 PG VGS = 20 - 0 V 50 L VDD
Test Circuit 2 Switching Time
D.U.T.
RL VGS VDD
Wave Form
VGS
10 % 0 VGS (on)
90 %
PG.
RG RG = 10
ID BVDSS IAS ID VDD t = 1 s Duty Cycle 1 % VDS VGS 0 t ID
Wave Form
90 % 90 % 10 % 0 td (on) ton tr
ID
10 % td (off) toff tf
Starting Tch
Test Circuit 3 Gate Charge
D.U.T. IG = 2 mA PG. 50
RL VDD
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
2SK2353/2SK2354
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 50 40 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
80
60 40
30
20
20
10
0
20
40
60
80
100 120
140
160
0
20
40
60
80
100 120
140
160
Tc - Case Temperature - C
Tc - Case Temperature - C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed
FORWARD BIAS SAFE OPERATING AREA 100
d ite ) im 0 V 1 )L (on = S S RD t V G (a ID (DC)
10
=
ID - Drain Current - A
ID - Drain Current - A
ID (pulse) PW
10 1m
10 10 m s
10 V VGS = 20 V 8V
10
10
0
s
8 6 4 2
s
s
Po
1.0
w
2SK2354 2SK2353
er
Di
ss
0
ipa
m
VGS = 6 V
tio
s
n
0.1 1
Tc = 25 C Single Pulse 10
Lim
ite
d
1000 0 4 8 12 16
100
VDS - Drain to Source Voltage - V DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 50 Pulsed
VDS - Drain to Source Voltage - V
ID - Drain Current - A
10
1 Ta = -25 C 25 C 75 C 125 C
0.1 0.05 0 5
10
15
VGS - Gate to Source Voltage - V
3
2SK2353/2SK2354
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 rth(ch-c) (t) - Transient Thermal Resistance - C/W
100
Rth(ch-c) = 62.5 C/W
10 Rth(ch-c) = 4.17 C/W 1
0.1 Tc = 25 C Single Pulse 10 100 1m 10 m 100 m 1 10 100 1 000
0.01
PW - Pulse Width - s
IyfsI - Forward Transfer Admittance - S
100 Ta = -25 C 25 C 75 C 125 C
RDS(on) - Drain to Source On-State Resistance -
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VDS = 10 V Pulsed
DRAIM TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 Pulsed
10
20 ID = 5 A ID = 2.5 A ID = 1 A 10
1.0
0.1
1.0
10
100
0
10
20
30
ID - Drain Current - A
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-State Resistance -
DRAIN TO SOURCE ON-STATE RESITANCE vs. DRAIN CURRENT Pulsed VGS(off) - Gate to Source Cutoff Voltage - V 3.0
GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = 10 V ID = 1 mA
4.0
2.0
3.0
2.0
1.0
1.0
0
0.1
1 ID - Drain Current - A
10
0
-50 0 50 100 150
Tch - Channel Temperature - C
4
2SK2353/2SK2354
RDS(on) - Drain to Source On-State Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 4.0 ID = 4 A 3.0 ID = 2 A ISD - Diode Forward Current - A 50
SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed
10
2.0
1.0
10 V
VGS = 0
1.0 VGS = 10 V 0 -50 0 50 100 150
0.1 0.05 0 0.5 1.0 1.5
Tch - Channel Temperature - C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 5 000 Ciss, Coss, Crss - Capacitance - pF td(on), tr, td(off), tf - Switching Time - ns VGS = 0 f = 1.0 MHz Ciss 500
VSD - Source to Drain Voltage - V
SWITCHING CHARACTERISTICS tr tf
1 000
100
td(off) 10 td(on)
Coss 100
Crss 10 5 1 10 100 1000
1.0 0.5 0.1
VDD = 100 V VGS = 10 V RG = 25 1.0 10 ID - Drain Current - A 100
VDS - Drain to Source Voltage - V
REVERSE RECOVERY TIME vs. DRAIN CURRENT 500 trr - Reverse Recovery Diode - ns di/dt = 50 A/ns VGS = 0 VDS - Drain to Source Voltage - V 400 400
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 16 VDD = 400 V 250 V 125 V 14 VGS 12 10 200 8 6 100 VDS 0 5 10 15 20 4 2 VGS - Gate to Source Voltage - V ID = 4.5 A 300
300
200
100
0 0.1 1.0 10 100 ID - Drain Current - A Qg - Gate Charge - nC
5
2SK2353/2SK2354
SINGLE AVALANCHE ENERGY vs STARTING CHANNEL TEMPERATURE 20 EAS - Single Avalanche Energy - mJ ID(peak) = IAS RG = 25 VGS = 20 V 0 V VDD = 150 V EAS = 17.4 mJ 10 100 IAS - Single Avalanche Current - A
SINGLE AVALANCHE CURRENT vs INDUCTIVE LOAD RG = 25 VDD = 150 V VGS = 20 V 0 Starting Tch = 25C
15
10 IAS = 4.5 A
EAS =1 7.4
1.0
mJ
5
0
25
50
75
100
125
150
175
0.1 100
1.0 m
10 m
100 m
Starting Tch - Starting Channel Temperature - C
L - Inductive Load - H
6
2SK2353/2SK2354
REFERENCE
Document Name NEC semiconductor device reliability/quality control system. Quality grade on NEC semiconductor devices. Semiconductor device mounting technology manual. Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. Power MOS FET features and application switching power supply. Application circuits using Power MOS FET. Safe operating area of Power MOS FET. Document No. TEI-1202 IEI-1209 IEI-1207 IEI-1213 MEI-1202 MF-1134 TEA-1034 TEA-1035 TEA-1037
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
7
2SK2353/2SK2354
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc.
M4 92.6

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